Skip to main content Skip to navigation
Washington State University Institute for Shock Physics

Faculty

Matthew McCluskey

Professor and Chair, Department of Physics

(509) 335-5356

Scientific Interests and Work

High pressure and semi-conductor physics.

Professor Matthew D. McCluskey has a broad research background in high-pressure and semiconductor physics. The primary focus is on materials that are important for optoelectronic applications, such as wide-bandgap semiconductors and organic crystals. Using diamond-anvil cells and low-temperature Fourier transform infrared spectroscopy, he has investigated the vibrational and structural properties of molecular solids and semiconductors under large static pressures. These studies have provided insight into the effect of pressure on the conformations, crystal structures, and vibrational interactions in a range of condensed-matter systems. To complement the static pressure work, Professor McCluskey pursues shock-compression experiments, as a member of WSU’s Institute for Shock Physics

Background

Dr. McCluskey performed his research for his Ph.D. primarily at the Lawrence Berkeley National Laboratory, under Prof. Eugene Haller (Materials Science and Engineering). He studied the behavior of hydrogen vibrational modes under hydrostatic pressures using Fourier transform infrared (FTIR) spectroscopy and diamond-anvil cells. Dr. McCluskey then worked as a postdoctoral research associate at the Xerox Palo Alto Research Center (PARC), under Dr. Noble Johnson from 1997-1998. His research concentrated on the material properties of gallium nitride-based semiconductors. In 1998, he joined the Department of Physics at Washington State University as an Assistant Professor. In 2009, he was promoted to Professor

Education

Ph.D. (Physics), 1997, University of California, Berkeley, California
M.Sc. (Physics), 1993, University of California, Berkeley, California
B.Sc. (Physics), 1991, Massachusetts Institute for Technology, Cambridge, Massachusetts

Honors and Recognition

  • Elected Vice Chair, Gordon Conference on Defects in Semiconductors 2006 (Chair 2008)
  • Elected member, International Advisory Committee, International Conference on Defects in Semiconductors (ICDS), 2003-5
  • Young Faculty Performance Award, College of Sciences, WSU, 2002
  • Phi Beta Kappa
  • Sigma Xi
  • Sigma Pi Sigma

Representative Publications

  1. W.M. Hlaing Oo and M.D. McCluskey, “Infrared spectroscopy of impurities in ZnO nanoparticles,” Semiconductor Defect Engineering—Materials, Synthetic Structures and Devices (2005), E4.40.
  2. M.D. McCluskey, S.J. Jokela, and W.M. Hlaing Oo, “Hydrogen donors in zinc oxide,” in Semiconductor Defect Engineering—Materials, Synthetic Structures and Devices, edited by S. Ashok, J. Chevallier, B.L. Sopori, M. Tabe, and P. Kiesel (Mater. Res. Soc. Symp. Proc. 864, Warrendale, PA , 2005), E10.4.
  3. M.D. McCluskey and S.J. Jokela, “Hydrogen donors in zinc oxide,” in Proceedings of the NATO Advanced Workshop on Zinc Oxide, edited by N. Nickel and E. Terukov, NATO Science Series II, Vol. 194, p. 125-32 (2005).
  4. S.J. Jokela and M.D. McCluskey, “Structure and stability of O-H donors in ZnO from high-pressure and infrared spectroscopy,” Phys. Rev. B 72, 113201 (2005).
  5. W.M. Hlaing Oo, M.D. McCluskey, A.D. Lalonde, and M.G. Norton, “Infrared spectroscopy of ZnO nanoparticles containing CO2 impurities,” Appl. Phys. Lett. 86, 073111 (2005).
  6. H.Y. Peng, M.D. McCluskey, Y.M. Gupta, M. Kneissl, and N.M. Johnson, “Shock-induced band-gap shift in GaN: Anisotropy of the deformation potentials,” Phys. Rev. B 71, 115207 (2005).
  7. M.A. Scarpulla, B.L. Cardozo, R. Farshchi, W.M. Hlaing Oo, M.D. McCluskey, K.M. Yu, and O.D. Dubon, “Ferromagnetism in Ga1-xMnxP: evidence for inter-Mn exchange mediated by localizedholes within a detached impurity band,” Phys. Rev. Lett. 95, 207204 (2005).
  8. M.D. McCluskey and S.J. Jokela, “Infrared spectroscopy of hydrogen in ZnO,” in Hydrogen in Semiconductors, edited by N.H. Nickel, M.D. McCluskey, and S.B. Zhang (Mat. Res. Soc. Symp. Proc. 813, Warrendale, PA, 2004), H3.2.
  9. M.D. McCluskey, “Pressure tuning of localized and extended vibrational modes in Si:O,” Phys. Stat. Sol. (b) 241, 3300-05 (2004).
  10. B. Pajot, B. Clerjaud, and M.D. McCluskey, “Isotope effects in the electronic spectrum of S+ and Se+ in silicon,” Phys. Rev. B 69, 085210 (2004).
  11. L. Hsu and M.D. McCluskey, “Vibrational studies and resonant interaction between localized and extended modes in Si:O under pressure,” Mod. Phys. Lett. B 18, 1013-28 (2004).
  12. K.K. Zhuravlev, and M.D. McCluskey, “Conformation of p-terphenyl under hydrostatic pressure,” J. Chem. Phys. 120, 1841-5 (2004).
  13. M.D. McCluskey, “Local vibrational mode spectroscopy of hydrogen in compound semiconductors,” in Hydrogen in Materials and Vacuum Systems, AIP Conf. Proc. 671, 49-54 (2003).
  14. B. Pajot, B. Clerjaud, and M.D. McCluskey, “Isotope effects in the electronic spectra of singly ionized S+ and Se+ donors in silicon, ” Physica B 340-342, 760-4 (2003).
  15. S.J. Jokela, M.D. McCluskey, and K.G. Lynn, “Infrared spectroscopy of hydrogen in annealed zinc oxide,” Physica B 340-342, 221-4 (2003).
  16. M.D. McCluskey, L. Hsu, and J.L. Lindström, “Interaction between localized and extended modes of oxygen in silicon,” Physica B 340-342, 514-7 (2003).
  17. M.D. McCluskey, C.G. Van de Walle, L.T. Romano, B.S. Krusor, and N.M. Johnson, “Effect of composition on the band gap of strained InxGa1-xN alloys,” J. Appl. Phys. 93, 4340-2 (2003).
  18. H.Y. Peng, M.D. McCluskey, Y.M. Gupta, M. Kneissl, and N.M. Johnson, “The Franz-Keldysh effect in shocked GaN:Mg,” Appl. Phys. Lett. 82, 2085-7 (2003).
  19. L. Hsu, M.D. McCluskey, and E.E. Haller, “Pressure dependence of donor excitation spectra in AlSb,” Phys. Rev. B 67, 035209 (2003).
  20. L. Hsu, M.D. McCluskey, and J.L. Lindstrom, “Resonant interaction between localized and extended vibrational modes in Si:18O under pressure,” Phys. Rev. Lett. 90, 095505 (2003).